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We consider theoretically the physics of bulk topological superconductivity accompanied by boundary non- Abelian Majorana zero modes in semiconductor-superconductor (SM-SC) hybrid systems consisting of finite wires in the presence of correlated disorder arising from random charged impurities. We find the system to manifest a highly complex behavior due to the subtle interplay between finite wire length and finite disorder, leading to copious low-energy in-gap states throughout the wire and considerably complicating the interpretation of tunneling spectroscopic transport measurements used extensively to search forMajorana modes. The presence of disorder-induced low-energy states may lead to the nonexistence of end Majorana zero modes even when tunneling spectroscopy manifests zero-bias conductance peaks in local tunneling and signatures of bulk gap closing/reopening in the nonlocal transport. In short wires within the intermediate disorder regime, apparent topology may manifest in small ranges (“patches”) of parameter values, which may or may not survive the longwire limit depending on various details. Because of the dominance of disorder-induced in-gap states, the system may even occasionally have an appropriate topological invariant without manifesting isolated end Majorana zero modes. We discuss our findings in the context of a recent breakthrough experiment from Microsoft reporting the simultaneous observations of zero-bias conductance peaks in local tunneling and gap opening in nonlocal transport within small patches of parameter space. Based on our analysis, we believe that the disorder strength to SC-gap ratio must decrease further for the definitive realization of non-Abelian Majorana zero modes in SM-SC devices. 

We investigate the effects of disorder characterizing a superconducting thin film on the proximity-induced superconductivity generated by the film (in, e.g., a semiconductor) based on the exact numerical analysis of a three-dimensional microscopic model. To make the problem numerically tractable, we use a recursive Green’s function method in combination with a “patching approach” that exploits the short-range nature of the interface Green’s function in the presence of disorder. As a result of the Fermi surface mismatch between the superconductor (SC) and the semiconductor (SM) in combination with the confinement-induced quantization of the transverse SC modes, the proximity effect induced by a clean SC film is typically one to three orders of magnitude smaller that the corresponding quantity for a bulk SC and exhibits huge thickness-dependent variations. The presence of disorder has competing effects: on the one hand, it enhances the proximity-induced superconductivity and suppresses its strong thickness dependence, on the other hand, it generates proximity-induced effective disorder in the SM. The effect of proximity-induced disorder on the topological superconducting phase and the associated Majorana modes is studied nonperturbatively. 

We address an outstanding problem that represents a critical roadblock in the development of the Majorana-based topological qubit using semiconductor-superconductor hybrid structures: the quantitative characterization of disorder effects generated by the unintentional presence of charge impurities within the hybrid device. Given that disorder can have far-reaching consequences for the Majorana physics but is intrinsically difficult to probe experimentally in a hybrid structure, providing a quantitative theoretical description of disorder effects becomes essential. To accomplish this task, we develop a microscopic theory that (i) provides a quantitative characterization of the effective potential generated by a charge impurity embedded inside a semiconductor wire proximity coupled to a superconductor layer by solving selfconsistently the associated three-dimensional Schrödinger-Poisson problem, (ii) describes the low-energy physics of the hybrid structure in the presence of s-wave superconductivity, spin-orbit coupling, Zeeman splitting, and disorder arising from multiple charge impurities by using the results of (i) within a standard free-fermion approach, and (iii) links the microscopic results to experimentally observable features by generating tunneling differential-conductance maps as a function of the control parameters (e.g., Zeeman field and chemical potential). We find that charge impurities lead to serious complications regarding the realization and observation of Majorana zero modes, which have direct implications for the development of Majorana-based qubits. More importantly, our work provides a clear direction regarding what needs to be done for progress in the field, including specific materials-quality and semiconductor-purity targets that must be achieved to create a topological qubit. 

We use the available transportmeasurements in the literature to develop a dataset for the likely amount of disorder in semiconductor (InAs and InSb) materials which are used in fabricating the superconductor-semiconductor nanowire samples in the experimental search for Majorana zero modes. Using the estimated disorder in direct Majorana simulations, we conclude that the current level of disorder in semiconductor Majorana nanowires is at least an order of magnitude higher than that necessary for the emergence of topological Majorana zero modes. In agreement with existing results, we find that our estimated disorder leads to the occasional emergence of trivial zero modes, which can be post-selected and then further fine-tuned by varying system parameters (e.g., tunnel barrier), leading to trivial zero-bias conductance peaks in tunneling spectroscopy with ∼2e2/h magnitude. Most calculated tunnel spectra in these disordered systems, however, manifest essentially no significant features, which is also consistent with the current experimental status, where zero-bias peaks are found only occasionally in some samples under careful fine-tuning.